发明名称 Semiconductor device
摘要 <p>A thin-film semiconductor element is formed on a plastic substrate in a semiconductor device. A thermal expansion buffer layer is interposed between the thin-film semiconductor element and the plastic substrate. Although the thin-film semiconductor element is made from a material with a thermal expansion coefficient differing from the thermal expansion coefficient of the plastic substrate, the thermal expansion buffer layer interposed between the thin-film semiconductor element, and the plastic substrate protects the thin-film semiconductor element from damage caused by mechanical stress in the device fabrication process due to the different thermal expansion coefficients, enabling the semiconductor device to function reliably.</p>
申请公布号 EP2096686(A2) 申请公布日期 2009.09.02
申请号 EP20090152536 申请日期 2009.02.11
申请人 OKI DATA CORPORATION 发明人 SUZUKI, TAKAHITO;OGIHARA, MITSUHIKO;NAKAI, YUSUKE;SAGIMORI, TOMOHIKO;FURUTA, HIRONORI;IGARI, TOMOKI;FUJIWARA, HIROYUKI
分类号 H01L33/00;H01L33/32 主分类号 H01L33/00
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