发明名称 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing a semiconductor device in which an increase in contact resistance is suppressed. SOLUTION: The apparatus 100a for manufacturing a semiconductor device is equipped with: an epitaxial layer forming apparatus 110; an electrode forming apparatus 150; and a connection part 120. The epitaxial layer forming apparatus 110 forms an epitaxial layer on a substrate. The electrode forming apparatus 150 forms an electrode on the epitaxial layer. The connection part 120 connects the epitaxial layer forming apparatus 110 and the electrode forming apparatus 150 while having an atmosphere isolated from air. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011114013(A) 申请公布日期 2011.06.09
申请号 JP20090266274 申请日期 2009.11.24
申请人 SUMITOMO ELECTRIC IND LTD 发明人 SAGA NORIHIRO
分类号 H01S5/042;H01L21/28;H01L21/285 主分类号 H01S5/042
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