发明名称 |
APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing a semiconductor device in which an increase in contact resistance is suppressed. SOLUTION: The apparatus 100a for manufacturing a semiconductor device is equipped with: an epitaxial layer forming apparatus 110; an electrode forming apparatus 150; and a connection part 120. The epitaxial layer forming apparatus 110 forms an epitaxial layer on a substrate. The electrode forming apparatus 150 forms an electrode on the epitaxial layer. The connection part 120 connects the epitaxial layer forming apparatus 110 and the electrode forming apparatus 150 while having an atmosphere isolated from air. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2011114013(A) |
申请公布日期 |
2011.06.09 |
申请号 |
JP20090266274 |
申请日期 |
2009.11.24 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
SAGA NORIHIRO |
分类号 |
H01S5/042;H01L21/28;H01L21/285 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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