| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer high in uniformity of resistivity in a wafer surface, and reduced in LPD density by surely suppressing auto-doping and production of a polysilicon product. SOLUTION: The method of manufacturing an epitaxial wafer includes: a back oxide film formation process of forming an oxide film 20 on the back 10a of a silicon substrate 10 before an epitaxial growth process; and a back oxide film removal process of removing only the back oxide film in a waver peripheral part of a predetermined width. Here, when the predetermined removal width in the removal of the back oxide film 20 and the resistivity of a desired epitaxial film are denoted by y (μm) and x (Ω cm), respectively, y and x satisfy the relationship of expression (1): y≤-909.01ln (x)+2044.8. COPYRIGHT: (C)2011,JPO&INPIT |
