| 摘要 |
A stacked inductor with different metal thickness and metal width is represented in this invention, this structure comprise: top and bottom metal trace, which is aligned with each other. The thickness and width of top and bottom metal trace are different. The top and bottom metal trace are connected at the end of metal trace with via holes. The inductance is increased with the use of the mutual inductance between top and bottom metal layers, and the parasitic resistor is reduced by means of different top and bottom metal width. This stacked inductor possesses larger inductance than single layer spiral inductor with relatively higher Q factor.
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