发明名称 PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM
摘要 <p>A plasma-enhanced chemical vapor deposition (PECVD) system comprises a process module which has a housing, in which multiple process chambers (1 ) are provided. The housing of the process module is connected with a first vacuum system, and the reaction chamber body of each process chamber (1) is connected with a second vacuum system. The first vacuum system and the second vacuum system are independent of each other and can be adjusted separately.</p>
申请公布号 WO2011066769(A1) 申请公布日期 2011.06.09
申请号 WO2010CN78560 申请日期 2010.11.09
申请人 NAN, JIANHUI;BEIJING NMC CO., LTD. 发明人 NAN, JIANHUI
分类号 C23C16/44;H05H1/00 主分类号 C23C16/44
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