| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem that, since the impurity density of a trapezoidal projection semiconductor layer is uniform in an optical semiconductor device having the trapezoidal projection semiconductor layer on a boundary face at the opposite side of a light extracting face of a semiconductor layer, a current is concentrated on the base of a trapezoid of the trapezoidal projection semiconductor layer, and light is emitted only in a narrow area of an active layer. <P>SOLUTION: A silicon oxide layer 5 and a trapezoidal projection p-type GaN layer 6' are formed on an n-type GaN layer 2, an active layer 3, and a p-type GaN layer 4, and a transparent electrode layer 7 and a reflecting electrode layer 8 are formed on the silicon oxide layer 5 and the trapezoidal projection p-type GaN layer 6'. The impurity concentration or carrier density in the trapezoidal projection p-type GaN layer 6' increases stepwise or consecutively from a bottom of the trapezoid toward a forefront part thereof. As a result, a current is implanted into the active layer 3 from the side and the forefront part of the trapezoid of the trapezoidal projection p-type GaN layer 6', and light is emitted in a wide area of the active layer 3. <P>COPYRIGHT: (C)2011,JPO&INPIT |
