METHOD FOR CLEANING PLASMA CVD APPARATUS, METHOD FOR FORMING SEMICONDUCTOR THIN FILM, METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, AND PLASMA CVD APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method for cleaning a plasma CVD apparatus, which can more appropriately clean the apparatus by determining the finished time of the cleaning operation from the temperature change of an exhaust pipe, and to provide a plasma CVD apparatus.

SOLUTION: This cleaning method includes: the first step of generating plasma in the inner part of a film-forming chamber 2 in a state of having introduced an etching gas. The method further includes: the second step of stopping the generation of the plasma after the temperature of the exhaust pipe has risen from the temperature of the exhaust pipe before starting the cleaning by a predetermined temperature or more.

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