An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided.
申请公布号
WO2011068022(A1)
申请公布日期
2011.06.09
申请号
WO2010JP70161
申请日期
2010.11.05
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI, SHUNPEI;TSUJI, TAKAHIRO;OCHIAI, TERUAKI;KUSUNOKI, KOJI;MIYAIRI, HIDEKAZU