SENSE AMPLIFYING CIRCUIT, SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME, AND METHOD OF SENSING A VOLTAGE SIGNAL

摘要

PURPOSE: A sense amplifying circuit, a semiconductor memory device having the same, and a method of sensing a voltage signal are provided to reduce the interference between input line pairs and output line pair by electrically separating the input line pair and the output line pair. CONSTITUTION: In a sense amplifying circuit, a semiconductor memory device having the same, and a method of sensing a voltage signal, A CMOS differential amplifier(110) amplifies the voltage signal of an input line pair in a pull-up and pull-down mode. The CMOS differential amplifier generates a first amplified voltage signal pair. The CMOS differential amplifier provides the first amplified voltage signal pair to the output line pair. A CMOS latch type sense amplifier(130) amplifies the voltage signal of the output line pair in a pull-up and pull down mode. The CMOS latch type sense amplifier generates a second amplified voltage signal pair. The CMOS latch type sense amplifier provides the second amplified voltage signal pair to the output line pair.