发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same that suppress characteristic variation and characteristic variance of a semiconductor element and a semiconductor IC caused by moisture absorption and drying of a mold material. SOLUTION: The present invention relates to the semiconductor device 1 and the method of manufacturing the same that specify a material which cancels stress of the mold material 103 as a material of a protective film 101 covering at least a part of the semiconductor element 104 resin-sealed with the mold material 103. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011114311(A) |
申请公布日期 |
2011.06.09 |
申请号 |
JP20090271963 |
申请日期 |
2009.11.30 |
申请人 |
ASAHI KASEI ELECTRONICS CO LTD |
发明人 |
KUNIMI HITOHISA;FUJITA HIROMI;AKIYAMA SHINICHIRO |
分类号 |
H01L23/29;C08G69/26;H01L21/56;H01L23/31 |
主分类号 |
H01L23/29 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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