| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress a GIDL of a transistor with respect to a semiconductor device having the transistor. <P>SOLUTION: The present invention relates to a semiconductor device having a vertical transistor. The vertical transistor has a semiconductor region, a columnar region provided on the semiconductor region, a gate insulating film provided covering a side face of the columnar region, a gate electrode provided on the gate insulating film, a first impurity diffusion region provided over the columnar region, and a second impurity diffusion region provided in the semiconductor region to surround the columnar region. The first impurity diffusion region is provided apart from the side face of the columnar region. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
