SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a technology for manufacturing a semiconductor element that forms multiple trenches for forming electrodes on a back-surface layer of a silicon carbide substrate inexpensively. SOLUTION: Multiple etch pits 24 are formed by wet etching in response to parts where displacement exist on a back-surface layer of the silicon carbide substrate 13. A cathode electrode 32 that ohmicly contacts with the silicon carbide substrate is formed by a sputtering method. Multiple p-layers 16 are formed on a front-surface layer of the silicon carbide substrate 13 and then an anode electrode 34 is formed by a sputtering method. Thus, a junction barrier Schottky diode is formed. COPYRIGHT: (C)2011,JPO&INPIT