| 摘要 |
PROBLEM TO BE SOLVED: To improve performance and manufacturing yield of a semiconductor device containing a nonvolatile memory. SOLUTION: A lamination pattern 7 containing a control gate electrode CG, an insulating film 5 thereon, and an insulating film 6 thereon is formed on the upper part of a semiconductor substrate 1. A memory gate electrode MG adjoining the lamination pattern 7 is formed on the upper part of the semiconductor substrate 1. An insulating film 3 for a gate insulating film is formed between the control gate electrode CG and the semiconductor substrate 1. An insulating film 9 containing a lamination film consisting of a silicon oxide film 9a, a silicon nitride film 9b, and a silicon oxide film 9c is formed between the memory gate electrode MG and the semiconductor substrate 1 as well as between the lamination pattern 7 and the memory gate electrode MG. At the side wall on the side adjoining the memory gate electrode MG of the lamination pattern 7, the insulating film 5 is receded from the control gate electrode CG and the insulating film 6, with an upper end corner C1 of the control gate electrode CG being rounded. COPYRIGHT: (C)2011,JPO&INPIT |
