| 摘要 |
PROBLEM TO BE SOLVED: To make a MOS transistor compact without decreasing an ON current of the MOS transistor. SOLUTION: A semiconductor device includes a substrate (semiconductor substrate 1) in which an element isolation region 3 for isolating an element formation region 2 from other regions is formed, a gate groove 4 formed in the element formation region 2, and a pair of diffusion regions 5 formed in the element formation region 2 and disposed separately from each other across the gate groove 4. The semiconductor device further includes a gate 6 formed in the gate groove 4 and at a peripheral edge of the gate groove 4. The gate groove 4 has a shape of its opening end 4a defined by the element isolation region 3 in a channel-width direction, and is formed so as to be in contact with the pair of diffusion regions 5 respectively in a channel length direction E. In the channel width direction D, the semiconductor device has a semiconductor region (silicon region 20) connecting the pair of diffusion regions 5 between the gate groove 4 and element isolation region 3. COPYRIGHT: (C)2011,JPO&INPIT |
