| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor in which an off current is reduced. SOLUTION: A thin film transistor has: a gate electrode 2 formed on a substrate 1; a silicon nitride film 3 formed so as to cover the gate electrode 2; a microcrystal Si semiconductor layer 4 formed on the silicon nitride film 3 and made of microcrystal silicon; and a source electrode 5 and a drain electrode 6 formed so as to contact with the microcrystal Si semiconductor layer 4. A channel region 11 is formed in a region superimposed with the gate electrode 2 of the microcrystal Si semiconductor layer 4, and a hydrogen plasma process is performed to the microcrystal silicon of the channel region 11. COPYRIGHT: (C)2011,JPO&INPIT
|
