发明名称 PRESSURE SENSING
摘要 A high electron mobility transistor (HEMT) is disclosed capable of performing as a pressure sensor. In one embodiment, the subject pressure sensor can be used for the detection of body fluid pressure. A piezoelectric, biocompatible film can be used to provide a pressure sensing functionalized gate surface for the HEMT. Embodiments of the disclosed sensor can be integrated with a wireless transmitter for constant pressure monitoring.
申请公布号 US2011137184(A1) 申请公布日期 2011.06.09
申请号 US200913058700 申请日期 2009.08.18
申请人 REN FAN;PEARTON STEPHEN JOHN 发明人 REN FAN;PEARTON STEPHEN JOHN
分类号 A61B5/021;H01L29/205;H01L29/778 主分类号 A61B5/021
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