| 发明名称 |
Manufacture method for IC process with TOP and TOP-1 metal layers thickened and stacked inductor manufactured by this method |
| 摘要 |
A manufacture method for IC process with top and top-1 metal layers thickened and stacked inductor manufactured by this method is represented in this invention. This method includes: with multi metal layers, and the thickness of top and top-1 metal layers are more than 2.8 um. Thickened top and top-1 metal layers can reduce the resistance of top and top-1 metal layers, so can increase the Q factor of inductor.
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| 申请公布号 |
US2011133876(A1) |
申请公布日期 |
2011.06.09 |
| 申请号 |
US20100960065 |
申请日期 |
2010.12.03 |
| 申请人 |
CHIU TZUYIN;XU XIANGMING;CAI MIAO;WANG SHENGRONG |
发明人 |
CHIU TZUYIN;XU XIANGMING;CAI MIAO;WANG SHENGRONG |
| 分类号 |
H01F5/00;H01L21/02 |
主分类号 |
H01F5/00 |
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