Nanodrahtstruktur mit freiliegenden, regelmäßig angeordneten Nanodrahtenden und Verfahren zur Herstellung einer solchen Struktur

摘要

The invention relates to a structure comprising nanowires that extend parallel to each other and that are made of a semiconductor material, the structure having at least one flat side having exposed, regularly arranged nanowires and having at least one macroporous stabilizing layer that is made of the same semiconductor material and that is penetrated perpendicularly by the nanowires, wherein the exposed nanowire ends protrude beyond the stabilizing layer by less than 100 µm.