SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve an electrode exposure on the top of a chip by supplying the power of a first polarity to the inner bottom of a first conductive semiconductor layer. CONSTITUTION: A light emitting structure includes a first conductive semiconductor layer(110), an active layer(120), and a second conductive semiconductor layer(130). An electrode layer(140) is electrically connected to a second conductive semiconductor layer under a light emitting structure. An electrode(170) is arranged in the center or one side of the first conductive semiconductor layer. A current diffusion layer(112) is arranged on the first conductive semiconductor layer. An insulation member(160) electrically separates the electrode from the active layer and the second conductive semiconductor layer.