发明名称 |
Zener-Triggered SCR-Based Electrostatic Discharge Protection Devices For CDM And HBM Stress Conditions |
摘要 |
SCR device is modified to improve turn-on speed for CDM stress conditions. A zener diode is integrated inside SCR device to create an internal feedback and improve turn-on speed. The zener diode is designed as a p+n+ diode in the boundary of the well-substrate junction. In the preferred implementation, zener diode is integrated inside the DSCR and is called zener-triggered DSCR. Zener-triggered DSCR reduces the first breakdown voltage to provide protection for thin gate oxide during HBM stress conditions. At the same time, this device increases turn-on speed to provide protection for CDM stress conditions. |
申请公布号 |
US2011133247(A1) |
申请公布日期 |
2011.06.09 |
申请号 |
US20090633263 |
申请日期 |
2009.12.08 |
申请人 |
SARBISHAEI HOSSEIN;SACHDEV MANOJ |
发明人 |
SARBISHAEI HOSSEIN;SACHDEV MANOJ |
分类号 |
H01L29/73;H01L21/331 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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