| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of etching a silicon substrate that can make the absolute amount of metal impurities as a generation source other than the silicon substrate lower than before during etching of the silicon substrate which is important for metal impurity evaluation by high-sensitivity chemical analysis necessary for shipping a product of high quality; and to provide a method of analyzing impurities of the silicon substrate using the same. SOLUTION: The method of etching the silicon substrate is characterized by etching a surface of the silicon substrate by bubbling a carrier gas in a mixed liquid of hydrofluoric acid, nitric acid, and acetic acid, and then introducing an etching gas produced by the bubbling and containing acid vapor into a container in which the silicon substrate is stored or blowing the etching gas directly to the surface of the silicon substrate. COPYRIGHT: (C)2011,JPO&INPIT |
