发明名称 SEMICONDUCTOR LASER DIODE DEVICE AND METHOD OF FABRICATION THEREOF
摘要 Disclosed is a distributed feedback semiconductor laser diode device capable of operating at a high output ratio of forward/backward optical power while ensuring satisfactory stability of single-mode oscillation. The distributed feedback semiconductor laser diode device is configured to include a diffraction grating formed in an optical waveguide thereof. In a partial region of the optical waveguide, there is formed an alternately repetitive pattern of a grating part possessing a distributive refractivity characteristic and a no-grating space part possessing a uniform refractivity characteristic. The no-grating space part possessing a uniform refractivity characteristic has an optical path length that is half an integral multiple of a wavelength of laser oscillation, and the grating part possessing a distributive refractivity characteristic includes at least five grating periods.
申请公布号 US2011134955(A1) 申请公布日期 2011.06.09
申请号 US20100951820 申请日期 2010.11.22
申请人 RENESAS ELECTRONICS CORPORATION 发明人 KITAMURA SHOTARO
分类号 H01S5/12;H01L21/30 主分类号 H01S5/12
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