PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD FOR SAME

摘要

The disclosed photoelectric conversion device contains: a substrate (1); a transparent conductive film (2) formed on the substrate (1); a first photoelectric conversion unit (3) formed on the transparent conductive film (2); and a second photoelectric conversion unit (4) formed on the first photoelectric conversion unit (3). The first photoelectric conversion unit (3) contains: a first p-type semiconductor layer (31); a first i-type semiconductor layer (32) comprising an amorphous silicon thin film; a first n-type semiconductor layer (33) comprising a crystalline silicon thin film; and a buffer layer (35) which is an n-type semiconductor comprising an amorphous silicon thin film, and which is disposed between the first i-type semiconductor layer (32) and the first n-type semiconductor layer (33).