METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Disclosed is a method for manufacturing a semiconductor device, wherein a deep hole is formed in a substrate using, as a mask, a photoresist film formed on the substrate. The method has: a disposing step wherein the substrate having the photoresist film formed thereon is disposed in an etching chamber, said photoresist film having an opening; a first etching step wherein the substrate disposed in the etching chamber is plasma-etched with a first mixed gas containing at least SiF4 and O2 using the photoresist film as a mask; and a second etching step wherein, sequentially after the first etching step, the substrate is plasma-etched with a second mixed gas containing at least SF6, O2 and HBr, and the hole is formed in the substrate.