METHOD FOR FORMING A SEMICONDUCTOR LAYER AND FABRICATING LIGHT EMITTING DEVICE

摘要

PURPOSE: A method for forming a semiconductor layer and a method for manufacturing a light emitting device are provided to reduce dislocation in a semiconductor layer of a chip region by concentrically distributing the dislocation on a semiconductor layer of a scribing region. CONSTITUTION: A growth substrate(300) is prepared. A protrusion pattern(310) is selectively formed on the growth substrate. A semiconductor layer(320) is formed on the growth substrate and the protrusion pattern. The semiconductor layer is selectively removed by including the protrusion pattern. A dislocation(321) is located on the semiconductor layer grown on the growth substrate adjacent to the protrusion pattern.