发明名称 MANUFACTURING NANOWIRE PHOTO-DETECTOR GROWN ON A BACK-SIDE ILLUMINATED IMAGE SENSOR
摘要 An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
申请公布号 US2011136288(A1) 申请公布日期 2011.06.09
申请号 US20090633297 申请日期 2009.12.08
申请人 ZENA TECHNOLOGIES, INC. 发明人 DUANE PETER;YU YOUNG-JUNE;WOBER MUNIB
分类号 H01L31/18 主分类号 H01L31/18
代理机构 代理人
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