| 摘要 |
A memory cell has a tunnel dielectric over a first silicon-containing material, a second silicon-containing material over the tunnel dielectric, a first silicon oxide layer on an edge of the second silicon-containing material and extending across a first portion of an edge of the tunnel dielectric, and a second silicon oxide layer on a side of the first silicon-containing material and extending across a second portion of the edge of the tunnel dielectric. The first and second silicon oxide layers are two distinct layers and are in contact with the tunnel dielectric layer.
|
