发明名称 |
SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING SCHOTTKY BARRIER DIODE |
摘要 |
A method for manufacturing a Schottky barrier diode includes the following steps. First, a GaN substrate is prepared. A GaN layer is formed on the GaN substrate. A Schottky electrode including a first layer made of Ni or Ni alloy and in contact with the GaN layer is formed. The step of forming the Schottky electrode includes a step of forming a metal layer to serve as the Schottky electrode and a step of heat treating the metal layer. A region of the GaN layer in contact with the Schottky electrode has a dislocation density of 1×108 cm−2 or less.
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申请公布号 |
US2011133210(A1) |
申请公布日期 |
2011.06.09 |
申请号 |
US200913057241 |
申请日期 |
2009.07.23 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HORII TAKU;MIYAZAKI TOMIHITO;KIYAMA MAKOTO |
分类号 |
H01L29/20;H01L21/283 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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地址 |
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