发明名称 DEVICE FOR PRODUCING SINGLE CRYSTALS AND METHOD FOR PRODUCING SINGLE CRYSTALS
摘要 <p>Disclosed is a device for producing single crystals by means of the Czochralski method that is equipped with a crucible that holds a starting material, a main chamber housing a heater that heats said starting material to form a melt, and a pulling chamber that is connected to the top of said main chamber and in which a single crystal that has been grown is pulled and held. The device for producing single crystals is characterized by being provided with an inner shield that is disposed between the aforementioned heater and the aforementioned main chamber and blocks radiant heat from the aforementioned heater, and a supporting member that supports said inner shield from below, wherein the aforementioned inner shield is supported by coming into contact with the aforementioned supporting member at three or more supporting points and the bottom of the aforementioned inner shield does not come into contact with the aforementioned supporting member outside of the aforementioned supporting points. As a result, the device for producing single crystals can increase the heat retention properties within the chamber by reducing the amount of heat escaping from the inner shield to the supporting member, and can conserve energy while reducing the production time of single crystals.</p>
申请公布号 WO2011067894(A1) 申请公布日期 2011.06.09
申请号 WO2010JP06554 申请日期 2010.11.09
申请人 SHIN-ETSU HANDOTAI CO.,LTD.;SHIMADA, TOSHIRO;SUGAWARA, KOSEI 发明人 SHIMADA, TOSHIRO;SUGAWARA, KOSEI
分类号 C30B29/06;C30B15/00 主分类号 C30B29/06
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