HYBRID MATERIAL INVERSION-MODE CYLINDRICAL GATE-ALL-AROUND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) FIELD EFFECT TRANSISTOR

摘要

A hybrid material inversion-mode cylindrical gate-all-around complementary metal-oxide-semiconductor (CMOS) field effect transistor (FET) is provided. The CMOS FET includes: a positive metal oxide semiconductor (PMOS) region with a first channel, a negative metal oxide semiconductor (NMOS) region with a second channel and a gate region. Both of the first channel and the second channel are cylindrical and made of different semiconductor materials. The first channel is made of n-type germanium (Ge) material, and the second channel is made of p-type silicon (Si) material. Surfaces of the first channel and the second channel are fully surrounded by the gate region. Buried oxide layers are arranged between the PMOS and the NMOS region, and between the PMOS region or the NMOS region and Si substrate. The CMOS FET has a simple and compact structure with high integration. Polysilicon gate depletion and short-channel effect under inversion operating mode can be avoided because of using the cylindrical gate-all-around structure, a high dielectric constant gate dielectric layer, and a metal gate.