<p>A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire (110) on a semiconductor substrate, (100) forming a first gate structure on a first portion of the nanowire, forming a first protective spacer (604) adjacent to sidewalls of the first gate structure and over portions of the nanowire extending from the first gate structure, removing exposed portions of the nanowire left unprotected by the first spacer, and epitaxially growing a doped semiconductor material (902) on exposed cross sections of the nanowire to form a first source region and a first drain region.</p>
申请公布号
WO2011067069(A1)
申请公布日期
2011.06.09
申请号
WO2010EP66961
申请日期
2010.11.08
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;SLEIGHT, JEFFREY;BANGSARUNTIP, SARUNYA;COHEN, GUY;CHANG, JOSEPHINE