发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME
摘要 PURPOSE: A semiconductor device and manufacturing method thereof are provided to fill a dielectric insulating material in a groove between an area where an electronic circuit is formed and a scribe area, thereby preventing moisture from being inserted into the area where the electronic circuit is formed. CONSTITUTION: A multilayer wiring layer is installed on the main surface of a semiconductor substrate. A first organic insulating material layer(6a) is installed on the multilayer wiring layer. A groove penetrates the multilayer wiring layer on a scribe area surrounding a semiconductor device. A wiring layer is installed on a first organic insulating material layer. A second organic insulating material layer(6b) covers the wiring layer.
申请公布号 KR20110061481(A) 申请公布日期 2011.06.09
申请号 KR20100117883 申请日期 2010.11.25
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 TSUKAKOSHI JUN;AIBA YOSHITAKA
分类号 H01L23/48;H01L21/78 主分类号 H01L23/48
代理机构 代理人
主权项
地址