发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME |
摘要 |
PURPOSE: A semiconductor device and manufacturing method thereof are provided to fill a dielectric insulating material in a groove between an area where an electronic circuit is formed and a scribe area, thereby preventing moisture from being inserted into the area where the electronic circuit is formed. CONSTITUTION: A multilayer wiring layer is installed on the main surface of a semiconductor substrate. A first organic insulating material layer(6a) is installed on the multilayer wiring layer. A groove penetrates the multilayer wiring layer on a scribe area surrounding a semiconductor device. A wiring layer is installed on a first organic insulating material layer. A second organic insulating material layer(6b) covers the wiring layer. |
申请公布号 |
KR20110061481(A) |
申请公布日期 |
2011.06.09 |
申请号 |
KR20100117883 |
申请日期 |
2010.11.25 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
TSUKAKOSHI JUN;AIBA YOSHITAKA |
分类号 |
H01L23/48;H01L21/78 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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