| 摘要 |
<p>A nonvolatile memory device includes a plurality of component memory layers stacked on one another. Each of the plurality of component memory layers includes a first wiring, a second wiring provided non-parallel to the first wiring, and a stacked structure unit provided between the first wiring and the second wiring. The stacked structure unit has a memory layer and a rectifying element. The rectifying element has a Schottky junction formed on an interface between an electrode and an oxide semiconductor. The electrode includes a metal and the oxide semiconductor includes a metal.</p> |
