| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for readily manufacturing a semiconductor device which has no voids, even if the die pressure bonding load applied to die bonding is small, or a pressure bonding time is shorter than the conventional pressure bonding times. <P>SOLUTION: The manufacturing method for the semiconductor device is a method of manufacturing a semiconductor device, having a substrate on which a chip is stacked via a cured adhesive layer, and the manufacturing method includes a heating/curing process of heating the substrate, on which the chip is stacked via the uncured adhesive layer to cure the uncured adhesive layer to create the cured adhesive layer; and a static pressure applying process of applying a static pressure which is equal to or higher than an atmospheric pressure by 0.05 MPa to the substrate, after the substrate on which the chip is stacked via the uncured adhesive layer is heated to a pressure application start temperature by the heating/curing process, with the pressure application start temperature being equal to or higher than 80°C and equal to or lower than the temperature at which the reaction rate of the adhesive layer becomes 10%. <P>COPYRIGHT: (C)2011,JPO&INPIT |
