发明名称 NANOWIRE STRUCTURED PHOTODIODE WITH A SURROUNDING EPITAXIALLY GROWN P OR N LAYER
摘要 An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.
申请公布号 US2011133160(A1) 申请公布日期 2011.06.09
申请号 US20090633318 申请日期 2009.12.08
申请人 ZENA TECHNOLOGIES, INC. 发明人 YU YOUNG-JUNE;WOBER MUNIB
分类号 H01L31/14;H01L31/0352 主分类号 H01L31/14
代理机构 代理人
主权项
地址
您可能感兴趣的专利