| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress a decrease in threshold current of a transistor while suppressing short-circuiting of the transistor by suppressing formation of a current leak path. <P>SOLUTION: A gate electrode 78 of the transistor is formed on a surface of a semiconductor substrate 62 via an insulating film 75, and then a p-type impurity is ion-implanted to form an element isolation region 65. Further, a p-type impurity is ion-implanted into an upper layer of the gate electrode 78 of the transistor using a mask 51 having an opening 50 narrower than a gate electrode width to form an LDD region 90. Then, a source region and a drain region of the transistor are formed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
