INSULATED GATE TYPE SEMICONDUCTOR ELEMENT AND INSULATED GATE TYPE SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide an insulated gate type semiconductor element that can reduce RTS (Random Telegraph Signal) noise, and to provide an insulated gate type semiconductor integrated circuit. SOLUTION: The insulated gate type semiconductor element includes: a p-type semiconductor layer 11 functioning as a channel region; an element isolation insulating film 21 at least surrounding the channel region and defining an active region 21B; an n-type first main electrode region 12 provided on one side of the active region 21B; an n-type second main electrode region 13 provided in the other side of the active region 21B; a gate insulating film 22 provided on the active region 21B; and a gate electrode 24 extending on the gate insulating film 22 in a direction orthogonal to a flow passage of a carrier flowing in the channel region between the main electrode region 12 and second main electrode region 13, an injection hole for the carrier to the channel region being provided apart from the element isolation insulating film 21. COPYRIGHT: (C)2011,JPO&INPIT