| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growth system that can form films with good efficiency of manufacture, and to provide a deposition method. SOLUTION: The vapor phase growth system 1 includes: a deposition chamber 4 which has a substrate S arranged inside to form a film on this substrate S; a first supply pipe 21 for supplying a gas containing a halogen element and a reactive gas which reacts with this gas to form a film on the substrate S into this deposition chamber 4; and a second supply pipe 31 for supplying the gas containing an organic metal and the reactive gas which reacts with the gas containing this organic metal to form a film on the substrate S into the deposition chamber 4. To the deposition chamber 4, the first supply pipe 21 and the second supply pipe 31 are connected. COPYRIGHT: (C)2011,JPO&INPIT
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