| 摘要 |
<p>Base and emitter zones are formed by sequential diffusion through masks on the surface of the substrate and these masks are then completely removed leaving the p-n junctions exposed along the top surface. For a Ga As transistor, a thin layer of GaN is then formed over the surface, followed by a reinforcing insulation layer of esp. Si3N4. Simple method of achieving reliable component by passivation.</p> |
