| 摘要 |
<p>A Ga As luminescence diode, with a mesa shaped n zone to act as reflector at the emissive p-n junction, is coupled via an optically and mechanically conductive but semi insulated body of Ga As, tapered inwards from the above transmitter diode, so that its reduced dia. end face touches the surface of a silicon planar photo-diode whose p-n junction area is larger than the tapered end. High refractive index cement may be used to join the three components at parallel plane transitions.</p> |
