Method for manufacturing semiconductor device, involves forming metal silicide in silicon-containing semiconductor material

摘要

The method involves forming drain and source extension regions (256) in a semiconductor region by using a gate electrode structure (260a,260B) as an implantation mask. A silicon-containing semiconductor material (220A) is formed above the drain and source extension regions on semiconductor region laterally adjacent to gate electrode structure. Drain and source regions are formed in a portion of silicon-containing semiconductor material. A metal silicide (258) made of nickel is formed in the silicon-containing semiconductor material. An independent claim is included for semiconductor device.