| 摘要 |
#CMT# #/CMT# The module has load connection elements (40, 42, 44) i.e. metal shaped bodies, with band-like sections (402, 422, 442), which are arranged parallel to a substrate surface and/or are arranged at distance from each other. Contact bases (400, 420, 440) are passed from the band-like sections to a substrate. Pressure transfer from one of the band-like sections to another one of the band-like sections takes place by a pressure transfer device. The pressure transfer device is formed as a pressure intermediate piece (80) and/or a deformation (90) of the band-like sections. #CMT#USE : #/CMT# Pressure-contacted semiconductor module for use on a cooling component. #CMT#ADVANTAGE : #/CMT# The pressure transfer from the band-like section to another band-like section takes place by the pressure transfer device that is formed as the pressure intermediate piece and/or the deformation of the band-like sections, thus improving power guidance from the load connection element to a contact of the connection element with conductor paths of the substrate in a simple manner. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a sectional view of elements of a pressure-contacted semiconductor module. 40, 42, 44 : Load connection elements 80 : Pressure intermediate piece 90 : Deformation 400, 420, 440 : Contact bases 402, 422, 442 : Band-like sections. |
