WAFER POLISHING METHOD

摘要

Disclosed is a wafer polishing method, whereby noise generated by a carrier is suppressed, and furthermore, variance of the thickness of a polished wafer is reduced. A polishing liquid is supplied to the surfaces (30a) of a pair of polishing pads (30) positioned above and below the carrier (10), which has a round hole (11) that holds the wafer (20), and which is thinner than the wafer (20), and the polishing pads (30) are relatively slid with respect to the carrier(10), thereby polishing at the same time the both surfaces of the wafer (20) held by the carrier (10). The thickness of the wafer (20) is obtained by detecting information which the carrier (10) issues when the difference between the thickness of the carrier (10) and that of the wafer (20) reaches a predetermined value, and the polishing is terminated.