发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>First data latches (30a, 30b) having a number of bits equal to the page length are provided in the stage following sense amplifiers (20a, 20b) and are controlled so as to always hold the same data as that in the sense amplifiers. Upon initiation of CAS access, data is transferred from the first data latches (30a, 30b) to an error detection/correction circuit (40), and error correction and parity generation are performed in a pipelined manner to reduce the CAS access time and CAS cycle time.</p>
申请公布号 WO2011067892(A1) 申请公布日期 2011.06.09
申请号 WO2010JP06501 申请日期 2010.11.04
申请人 PANASONIC CORPORATION;IIDA, MASAHISA 发明人 IIDA, MASAHISA
分类号 G11C29/42 主分类号 G11C29/42
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