| 摘要 |
<p>A method of etching a substrate, such as silicon, using a plasma reactor to form deep features is provided. The method includes the steps of putting a semiconductor substrate including, but not limited to a silicon layer, into a plasma reactor, and flowing an etching gas that includes fluorinated etching gas, passivating reacting gas comprising oxygen and inert sputtering gas. An additional gas can be added, but not necessarily, such as nitrogen, carbon monoxide, CFx, CHFx, CxFy or hydrogen bromide, to assist in feature dimensional control. The feature dimensional control gas can control the feature size and etch angle. The method further promotes a silicon monoxide sidewall passivation to enhance feature dimensional control.</p> |
