| 摘要 |
<p>Disclosed are a group III nitride semiconductor element provided, on the semipolar surface of a hexagonal group III nitride, with a laser oscillator which is capable of having a low threshold current, and a method for stably manufacturing said group III nitride semiconductor laser element. Cutout segments (113a and such) are formed on each of the four corners of a first surface (13a) of a group III nitride semiconductor laser element (11) on the anode side. The cutout segments (113a and such) are part of scribe grooves disposed so as to separate the element (11). The scribe grooves are formed with a laser scriber, and the shape of the scribe grooves are adjusted by controlling the laser scriber. For example, the ratio between the depth of the cutouts (113a and such) and the thickness of the group III nitride semiconductor laser element (11) is 0.05 to 0.4, inclusive, the tilt angle of the sidewall surface on the edge of cutout (113a) is 45 degrees to 85 degrees, inclusive, and the tilt angle of the sidewall surface on the edge of cutout (113b) is 10 degrees to 30 degrees, inclusive.</p> |
