PURPOSE: A plasma processing device is provided to uniformize plasma density on a substrate by grounding a substrate support frame on a chamber through a ground wire and supporting the edge of the substrate using a substrate support frame. CONSTITUTION: A chamber(110) provides a reactive space for plasma process. A plasma electrode(120) is installed on the upper side of the chamber. A gas spray member(140) is installed on the lower side of the plasma electrode and sprays process gas to the reactive space. A substrate support member(130) is installed in the chamber to face the plasma electrode. A substrate support frame(150) supports the edge of the substrate by being lifted by the substrate support member.
