| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a power semiconductor device that suppresses deterioration in heat dissipation performance and insulation performance. <P>SOLUTION: The power semiconductor device 101 includes a power semiconductor element 1 as a first power semiconductor element, metal members 6, 8 as a pair of metal members arranged with the power semiconductor element 1 interposed therebetween, a pair of insulating layers 12a, 12b laminated on metal plates 11a, 11b as a pair of heat sinks with the pair of metal members 6, 8 interposed therebetween, and a filling resin 18 charged while covering at least the power semiconductor element 1, the pair of metal members 6, 8, and the pair of insulating layers 12a, 12b. The coefficient of thermal expansion of the pair of insulating layers 12a, 12b is substantially equal to that of the filling resin 18. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
