| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve carrier conductivity at a junction without lowering translucency for making light incident on a photoelectric conversion element in a lower layer. <P>SOLUTION: A photoelectric conversion device includes a transparent electrode layer 2; a first photoelectric conversion layer 3 having a first p-type semiconductor layer 3a, a first i-type semiconductor layer 3b and a first n-type semiconductor 3c laminated in order on a translucent insulating substrate 1; an intermediate layer 4 having a first intermediate layer 4a and a second intermediate layer 4b laminated in order; a second photoelectric conversion layer 5 having a second p-type semiconductor layer 5a, a second i-type semiconductor 5b, and a second n-type semiconductor layer 5c laminated in order; and a back electrode layer 6. The intermediate layer 4 includes a layer composed of a translucent material which tilts the energy band of the n type semiconductor layer 3c in a negative direction as the first intermediate layer 4a and a layer composed of a translucent material which tilts the energy band of the p type semiconductor layer 5a in a positive direction as the second intermediate layer 4b. The first photoelectric conversion layer 3 and second photoelectric conversion layer 5 are electrically connected to each other. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
