发明名称 |
Three-Dimensional Integrated Circuits and Techniques for Fabrication Thereof |
摘要 |
Integrated circuits having complementary metal-oxide semiconductor (CMOS) and photonics circuitry and techniques for three-dimensional integration thereof are provided. In one aspect, a three-dimensional integrated circuit comprises a bottom device layer and a top device layer. The bottom device layer comprises a substrate; a digital CMOS circuitry layer adjacent to the substrate; and a first bonding oxide layer adjacent to a side of the digital CMOS circuitry layer opposite the substrate. The top device layer comprises an analog CMOS and photonics circuitry layer formed in a silicon-on-insulator (SOI) layer having a buried oxide (BOX) with a thickness of greater than or equal to about 0.5 micrometers; and a second bonding oxide layer adjacent to the analog CMOS and photonics circuitry layer. The bottom device layer is bonded to the top device layer by an oxide-to-oxide bond between the first bonding oxide layer and the second bonding oxide layer.
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申请公布号 |
US2011133281(A1) |
申请公布日期 |
2011.06.09 |
申请号 |
US201113019130 |
申请日期 |
2011.02.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ASSEFA SOLOMON;CHEN KUAN-NENG;KOESTER STEVEN J.;VLASOV YURII A. |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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